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Product categories
BSC016N06NS
Brand: Infineon(英飞凌)
product Model: BSC016N06NS
Description : Optimized for synchronous rectification. 100% avalanche tested. Excellent thermal resistance. N-channel. Certified for target applications in compliance with JEDEC standards. Lead-free pin plating, RoHS compliant. Halogen-free as per IEC61249-2-21 standard. Higher solder joint reliability due to expanded source interconnections
Encapsulation ：TDSON-8FL
Qty: 5000
BSS138NH6327
Brand: Infineon(英飞凌)
product Model: BSS138NH6327
Description : N沟道
Encapsulation ：SOT-23
Qty: 3000
BTS6143D
Brand: Infineon(英飞凌)
product Model: BTS6143D
Description : Automotive-grade intelligent high-side switch (with diagnostic function)
Encapsulation ：TO-252-4
Qty:2500
IPA60R400CE
Brand: Infineon(英飞凌)
product Model: IPA60R400CE
Description : CoolMOS is a revolutionary technology for high-voltage power MOSFETs designed based on the Super Junction (SJ) principle. CoolMOS CE is a cost-effective platform that targets cost sensitive applications in the consumer and lighting markets while meeting the highest efficiency standards. The new series has all the advantages of fast switching super junction MOSFETs, while not sacrificing usability and providing the best cost-effectiveness ratio on the market.
Encapsulation ：TO-220F
Qty: 50
IPB042N10N3G
Brand: Infineon(英飞凌)
product Model: IPB042N10N3G
Description : N-channel, normal voltage level. Excellent gate charge multiplied by on resistance (FOM). Extremely low on resistance RDS (on). 175 ℃ working temperature. Lead free plating; Compliant with RoHS standards. According to JEDEC certification, suitable for the target application. Very suitable for high-frequency switches and synchronous rectification. According to the IEC61249-2-21 standard, halogen-free
Encapsulation ：TO-263-3
Qty: 1000
IPD60R180P7S
Brand: Infineon(英飞凌)
product Model: IPD60R180P7S
Description : The CoolMOS 7th generation platform is a revolutionary technology for high-voltage power MOSFETs, designed based on the superjunction (SJ) principle. It combines the advantages of fast switching SJ MOSFET with excellent usability, such as extremely low ringing tendency, excellent robustness of body diode to hard commutation, and outstanding ESD capability. In addition, the extremely low switching and conduction losses make switching applications more efficient, compact, and cool.
Encapsulation ：TO-252-3
Qty: 2500
IPP075N15N3G
Brand: Infineon(英飞凌)
product Model: IPP075N15N3 G
Description : N-channel, normal voltage level. Excellent gate charge multiplied by on resistance (FOM) product. Extremely low on resistance. 175 ° C working temperature. Lead free pin coating, compliant with RoHS standards. Certified according to JEDEC standards for the target application. Suitable for high-frequency switches and synchronous rectification. According to IEC61249-2-21 standard, halogen-free
Encapsulation ：TO-220-3
Qty: 1000
IR3889MTRPBF
Brand: Infineon(英飞凌)
product Model: IR3889MTRPBF
Description : IR3889 is an easy-to-use fully integrated DC-DC buck regulator. Onboard PWM controller and OptiMOS with integrated bootstrap diode ™ FET makes IR3889 a small-sized solution that enables efficient power transmission. In addition, it adopts a fast constant on-time (COT) control scheme, which simplifies the design work and achieves fast control response. IR3889 has an internal low dropout regulator that allows for single power supply. It can also operate with an external bias power supply, and its operating input voltage (PVin) range is extended to 2.0 V to 17 V. IR3889 is a multifunctional regulator that offers programmable switching frequencies from 600 kHz to 2 MHz, four optional current limits, four optional soft start times, forced continuous conduction mode (FCCM), and diode simulation mode (DEM) operation. It also has important protection functions, such as pre bias start, thermal compensation current limit, overvoltage and undervoltage protection, and thermal shutdown function, which can provide the required system level safety guarantee under fault conditions.
Encapsulation ：IQFN-36-EP(5×6)
Qty: 5000
IRF100B202
Brand: Infineon(英飞凌)
product Model: IRF100B202
Description : N-channel, normal voltage level. Excellent gate charge multiplied by on resistance (FOM) product. Extremely low on resistance. 175 ° C working temperature. Lead free pin coating, compliant with RoHS standards. Certified according to JEDEC standards for the target application. Suitable for high-frequency switches and synchronous rectification. According to IEC61249-2-21 standard, halogen-free
Encapsulation ：TO-220-3
Qty: 1000
IRF3205PBF
Brand: Infineon(英飞凌)
product Model: IRF3205PBF
Description : The advanced HEXFET power MOSFET adopts advanced processing technology to achieve extremely low on resistance per unit silicon wafer area. Combining fast switching speed and robust device design (which HEXFET power MOSFETs are known for), it provides designers with an extremely efficient and reliable device that can be used for various applications. For all commercial industrial applications, the TO-220 package is generally preferred at power consumption levels of approximately 50 watts
Encapsulation ：TO-220AB
Qty: 50
IRF4905STRLPBF
Brand: Infineon
Product Model: IRF4905STRLPBF
Description: 1 P-channel; Withstand voltage: 55V; Current: 70A; P-channel, -55V, -42A, 20mΩ @ -10V
Product Packaging: D2PAK
Packaging Method: Tape and Reel
Package Quantity: 2000
IRF540NSTRLPBF
Brand: Infineon(英飞凌)
product Model: IRF540NSTRLPBF
Description : N沟道,100V,33A,44mΩ@10V
Encapsulation ：D2PAK
Qty:800
IRF640NSTRLPBF
Brand: Infineon(英飞凌)
product Model: IRF640NSTRLPBF
Description : N沟道,220V,18A,150mΩ@10V
Encapsulation ：D2PAK
Qty: 1000
IRF7205TRPBF
Brand: Infineon(英飞凌)
product Model : IRF7205TRPBF
Description : High current MOS transistor
Encapsulation ：SO-8
Qty: 4000
IRFB4227PBF
Brand: Infineon(英飞凌)
product Model: IRFB4227PBF
Description : N沟道,200V,65A,19.7mΩ@10V
Encapsulation ：TO-220AB
Qty: 1000
IRFB4410ZPBF
Brand: Infineon(英飞凌)
product Model: IRFB4410ZPBF
Description : N沟道,55V,49A,17.5mΩ@10V
Encapsulation ：TO-220AB
Qty: 3000
IRFB7440PBF
Brand: Infineon(英飞凌)
product Model: IRFB7440PBF
Description : N沟道,40V,172A,2.5mΩ@10V
Encapsulation ：TO-220AB
Qty: 50
IRFP064NPBF
Brand: Infineon(英飞凌)
product Model: IRFP064NPBF
Description : N沟道,55V,110A,8mΩ@10V
Encapsulation ：TO-247AC-3
Qty: 450
IRFR024NTRPBF
Brand: Infineon(英飞凌)
product Model: IRFR024NTRPBF
Description : N沟道,55V,17A,75mΩ@10V
Encapsulation ：DPAK(TO-252AA)
Qty:2000
IRFR120NTRPBF
Brand: Infineon(英飞凌)
product Model: IRFR120NTRPBF
Description : N沟道,100V,9.4A,210mΩ@10V
Encapsulation ：DPAK(TO-252AA)
Qty: 2000
IRFR5305TRPBF
Brand : Infineon
Product Model: IRFR5305TRPBF
Description: 1 P-channel; Withstand Voltage: 55V; Current: 31A; 65mΩ@-10V
Package: DPAK (TO-252AA)
Packaging: Tape and Reel
Quantity: 2000
IRFR5505TRPBF
Brand: Infineon(英飞凌)
product Model: IRFR5505TRPBF
Description : P沟道,-55V,-18A,110mΩ@10V
Encapsulation ：TO-252
Qty:2000
IRFR9024NTRPBF
Brand : Infineon(英飞凌)
product Model : IRFR9024NTRPBF
Description : P沟道,55V ,11A,175mΩ
Encapsulation : DPAK(TO-252AA)
Qty:2000
IRFS7537TRLPBF
Brand : Infineon(英飞凌)
product Model : IRFS7537TRLPBF
Description : Improved durability of gate, avalanche, and dynamic dV/dt. Fully characterized capacitance and avalanche SOA. Enhanced body diode dV/dt and dI/dt capabilities. Lead free, compliant with RoHS standards. Application: Brushed motor drive application. Application of Brushless DC Motor Drive
Encapsulation ：D2PAK
Qty : 800